A high-density and low-cost self-aligned shallow trench isolation NOR flash technology with 0.14μm/sup 2/ cell size

Y.H Song,S.Y Kim,J.I Han,J.S Lee,D.Y Lee,K.D Suh,J.H Park,J Kim,J.W Kim,W.K Lee,D.W Kwon,Y.M Park,M.S Kang

doi:10.1109/iedm.2001.979397

A high-density and low-cost self-aligned shallow trench isolation NOR flash technology with 0.14μm/sup 2/ cell size

Y.H Song, S.Y Kim + Show 11 more

https://doi.org/10.1109/iedm.2001.979397

Copy DOI

Publication Date: Dec 2, 2001

Citations: 6

#Self-aligned Shallow Trench Isolation #NOR Flash Technology + Show 8 more

Abstract
Full-Text PDF
Similar Papers

Abstract

We have developed a new cell technology with extremely small cell size of 0.14 /spl mu/m/sup 2/ using 0.12 /spl mu/m process. The self-aligned shallow trench isolation (SA-STI) and self-aligned source (SAS) structure are adopted to minimize the cell size. To scale down the cell gate length and to improve the cell performance, high aspect-ratio floating gate and channel erasing scheme are used. Excellent endurance characteristics, tight threshold voltage distribution and good reliability have been verified in this work.

Full Text