Abstract
This brief presents a high-voltage generation charge pump integrated circuit (IC) with a novel regulation scheme for neural stimulation applications. Instead of using a widely used pulse frequency modulation approach with a variable clock frequency for regulation, an input voltage modulated regulation with a low drop-out regulator at the input of the feedforward path is used to maintain the charge pump output voltage with varying load current between 10 μA to 1 mA. The proposed charge pump IC, implemented with 0.18-μm standard low-voltage CMOS process, reliably generates 12.8-V output voltage from a 2.8-V input and achieves more than 80% power efficiency at 1 mA load condition. The proposed IC occupies 0.6 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of core die area.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Transactions on Circuits and Systems II: Express Briefs
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
