Abstract
This work introduces a new super junction MOSFET. High switching speed is an essential parameter in this device. Negative resistance in gas electron between GaAs and AlGaAs is used to design this structure. The new designed device stores much less charges in its channel, because its junction and parasitic capacitance are small. As well, in on-state it has lower resistance relative to the traditional device. Therefore, the amount of RDS × QC which is Figure of Merit (FOM) will decrease, enormously. The designed MOSFET has been applied in a 3–phase inverter and its performance for giving a sinusoidal output has been showed. All the simulations have been done in SILVACO software.
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