A high-speed 1 Kbit high electron-mobility transistor static RAM: N H Sheng, H T Wang (Rockwell Int. Sci. Center, Thousand Oaks, CA, USA), C P Lee, G J Sullivan, D L Miller IEEE Trans. Electron. Devices (USA), vol. ED-34, no. 8, pt. 1, pp 1670–1675 (Aug. 1987)

doi:10.1016/s0026-2692(88)80201-5

A high-speed 1 Kbit high electron-mobility transistor static RAM: N H Sheng, H T Wang (Rockwell Int. Sci. Center, Thousand Oaks, CA, USA), C P Lee, G J Sullivan, D L Miller IEEE Trans. Electron. Devices (USA), vol. ED-34, no. 8, pt. 1, pp 1670–1675 (Aug. 1987)

https://doi.org/10.1016/s0026-2692(88)80201-5

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Journal: Microelectronics Journal

Publication Date: Jan 1, 1988

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A high-speed 1 Kbit high electron-mobility transistor static RAM: N H Sheng, H T Wang (Rockwell Int. Sci. Center, Thousand Oaks, CA, USA), C P Lee, G J Sullivan, D L Miller IEEE Trans. Electron. Devices (USA), vol. ED-34, no. 8, pt. 1, pp 1670–1675 (Aug. 1987)

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