Abstract
A pseudomorphic HEMT (high electron mobility transistor) with record output power and high efficiency at 44 GHz has been developed. The 0.15 mu m gate-length, 900 mu m gate-width device generates 500 to 700 mW of output power with power-added efficiencies ranging from 22 to 30%. Moreover, the devices are producible: DC yields for these large gate-width HEMTs are 50-80% and uniformity of electrical characteristics is excellent. Reliability aspects of the device are discussed and the results of high-temperature DC life testing of pseudomorphic power HEMTs are reported. >
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