A High Power Density Double-Side-End Double-Sided Bonding SiC Half-Bridge Power Module

Abstract

Silicon Carbide (SiC) power module with lower loop inductance, better dynamic current sharing properties and better thermal performance will contribute to achieve high power density three phase inverter in medium voltage applications. Inspired by the concept of double-side-end busbar, a novel double-side-end double sided bonding power module is proposed in this paper. For three chips parallel situation, double-side-end structure decreases parasitic inductance by 40% compared to that of traditional baseline structure. Besides lower parasitic inductance, novel structure also has better dynamic current sharing properties. To explain these dynamic current sharing phenomena, an equivalent source inductance model considering mutual inductance is proposed in this paper. A 1200V 10mΩ SiC double-side-end double sided bonding half-bridge power module is designed, fabricated and tested. Proposed power module realizes 3nH power loop inductance. Furthermore, to realize practical application of the novel power module, a novel compact two-level three-phase integration architecture based on novel power module is also proposed. With the help of the double-sided direct-cooling method and double-side-end busbar, proposed architecture will help to realize better performance.