Abstract
AbstractNanostructured semiconductor materials synthesized through solution processes have received a substantial body of attention owing to their cost‐effectiveness, manufacturing ease, and environmental friendliness. Here, a simple solution approach is used to synthesize Bi2Se3/Se nanorods (NRs) heterojunction by covering Se NRs with a uniform Bi2Se3 shell. The morphology, composition, and structure of the samples are characterized and the growth mechanism is also analyzed. Furthermore, the photodetector based on the Bi2Se3/Se NRs is fabricated. The as‐prepared Bi2Se3/Se NRs photodetector exhibits an outstanding broadband photoresponse from UV (365 nm) to IR (850 nm) with good repeatability and self‐powered ability. Upon light illumination, Bi2Se3/Se NRs photodetector shows maximum photocurrent of 190 µA (UV light), 194 µA (blue light), 145 µA (green light), 38 µA (red light), 4 µA (IR light) as well as a rapid response time around 0.1 s approximately. Moreover, a possible detection mechanism of Bi2Se3/Se NRs photodetector is also discussed.
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