A High Linearity Wide Bandwidth GSM/WCDMA/LTE Base Station LNA MMIC with Ultra Low Noise Figure

Abstract

This paper presents a high linearity wide bandwidth low noise amplifier (LNA) MMIC with excellent noise figure. The amplifier topology is compromised of a single-stage cascode topology with inductive source degeneration of common-source device. This amplifier topology seems an attractive choice for applications requiring wide bandwidth, high gain, and high linearity. The design targets 700–900 MHz, 1700–2200 MHz, and 2500–2800 MHz frequency bands for GSM/WCDMA/LTE base station receiver applications. A single-stage amplifier is implemented in a high performance 0.25um InGaAs E/D-mode pHEMT technology and demonstrates a high gain and an excellent bandwidth along with a high-linearity. Additionally, an excellent noise performance is achieved demonstrating $< \pmb{0.6} \mathbf{dB}$ noise figure in 700–900 MHz frequency band while exhibiting $< \pmb{0.75} \mathbf{dB}$ noise figure in 1700–2200 MHz frequency band. A single-stage amplifier provides 20 dB of small-signal gain with excellent linearity of output $\mathbf{OIP}\pmb{3}\geq+\pmb{32.0}\mathbf{dBm}$ while requiring only 45 mA from a $\pmb{+5}\mathbf{V}$ supply.