Abstract
A three-stage 4.8–6 GHz monolithic power amplifier (PA) compatible with IEEE 802.11a/n designed based on an advanced 2 μm InGaP/GaAs hetero-junction bipolar transistor (HBT) process is presented. The PA integrates input matching and closed-loop power control circuits on chip. Under 3.3 V DC bias, the amplifier achieves a ∼31 dB small signal gain, excellent wide band input and output matching among overall 1.2 GHz bandwidth, and up to 24.5 dBm linear output power below EVM 3% with IEEE 802.11a 64QAM OFDM input signal.
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