Abstract
This paper presents a Doherty power amplifier with advanced design methods for high efficiency and linearity applied to retrodirective communication system for high peak to average power ratio (PAR). A special inverted Doherty topology is proposed in order to optimize the average efficiency of Doherty amplifier. Also we develop Doherty power amplifier with uneven power drive which is provided more input power to the peak amplifier than carrier amplifier for full power operation and appropriate load modulation. These methods are applied to implement Doherty power amplifier using GaAs FET. The amplifier is optimized at large power back-off. The power added efficiency (PAE) and adjacent channel leakage ratio (ACLR) are 33.1% and −47 dBc, which improves about 3.2% and 5 dB respectively, its third-order intermodulation distortion (IMD3) has 2.5 dB improvement compared with conventional Doherty power amplifier.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
