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Abstract
Direct oxidation of composite Al/Ti metal films as gate insulators for AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs/HEMTs) is successfully realized. The devices fabricated with this novel process exhibit four orders of magnitude reduction in gate leakage current and remarkable breakdown voltage (Vbr = 490 V vs 88 V for normal HEMT) improvement, compared with conventional Schottky-gate HEMTs. Furthermore, the transconductance of the MOSHEMT is only slightly lower (2.6%) than that of Schottky-gate HEMTs and have a wider full width of half maximum. The notable enhancement in device performance renders this new process highly promising for GaN-based microwave power amplifier applications in communication and radar systems.
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