High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology

Abstract

Listen

Translate article

In this paper, we demonstrate 253% improvement in the off-state breakdown voltage (BV) of the lattice-matched In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.17</sub> Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.83</sub> N/GaN high-electron-mobility transistors (HEMTs) by using a new Schottky-Source technology. Based on this concept, the Schottky-Source (SS) InAlN/GaN HEMTs are proposed. The SS HEMTs with a L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> of 15 μm showed a three-terminal BV of 650 V, while conventional InAlN/GaN HEMTs of the same geometry showed a maximum BV of 184 V. Without using any field-plate the result measured in the proposed device is the highest BV ever achieved on InAlN/GaN HEMTs. The corresponding specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sp, on</sub> ) is as low as 3.4 mΩ·cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . A BV of 118 V was also obtained in an SS InAlN/GaN HEMTs with L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> =1 μm, which is the highest BV in GaN-based HEMTs featuring such a short L <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">GD</sub> with GaN buffer.