A High Accuracy Ion Conductance Imaging Method Based on the Approach Curve Spectrum

Abstract

Scanning ion conductance microscopy (SICM), as an emerging non-contact in situ topography measurement tool with nano resolution, has been increasingly used in recent years in biomedicine, electrochemistry and materials science. In the conventional measurement method of SICM, the sample topography is constructed according to the position of the probe at the feedback threshold of the ion current. Nevertheless, for different structures, a constant threshold cannot maintain a constant probe-sample distance. This phenomenon makes the measurement topography inconsistent with the real sample surface. In order to solve this problem and improve the measurement accuracy of SICM, a new ion conductance imaging method based on the approach curve spectrum is proposed in this work. In the new method, the local feature around the measurement point is firstly evaluated according to the change rate of ion current. Secondly, based on the local feature, the corresponding approach curve is searched from the prior approach curve spectrum to accurately evaluate the distance between the probe and the sample. Finally, the sample topography is constructed by the probe position subtracting the probe-sample distance. In this paper, we verify the feasibility of the new imaging method by combining finite element theory and experiments. To examine the measurement accuracy, the standard strip silicon and cylindrical polydimethylsiloxane (PDMS) samples are tested, and the improved imaging method can obtain the topography closer to the real samples and reduce the volumetric measurement error by 5.4%. The implementation of the new imaging method will further promote SICM application in related research fields.