Abstract
Experimental data are presented on d.c. drain current instabilities in depletion mode insulated gate InP field effect transistors (D-MISFETs). d.c. drain current decay with time exhibited by InP MISFETs represents impediment to their use. New data presented here suggest that the models proposed to account for this instability may have to be revised. The construction and properties of a different type of device employing semi-insulating In x Al 1− x As as the gate insulator is described. It is shown that such heterojunction insulated gate field effect transistors have none of the d.c. instabilities associated with MISFETs and that they provide good prospects for applications which require high frequency and high power performance.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
