A $\hbox{TiSi}_{2}/\hbox{Si}$ Heteronanocrystal Memory Operated With Hot Carrier Injections

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> The programming and erasing of a <formula formulatype="inline"><tex>$\hbox{TiSi}_{2}/\hbox{Si}$</tex> </formula> heteronanocrystal memory were carried out by channel hot electron injection and drain side hot hole injection, respectively. Compared to an Si nanocrystal memory, a <formula formulatype="inline"><tex>$\hbox{TiSi}_{2}/\hbox{Si}$</tex> </formula> heteronanocrystal memory exhibits much better writing/erasing efficiency and higher writing/erasing saturation level. The retention transient process indicates that the <formula formulatype="inline"><tex>$\hbox{TiSi}_{2}/\hbox{Si}$</tex> </formula> heteronanocrystal memory has a very slow charge loss mechanism. The result of the localization of charge shows that a reverse read leads to a higher threshold voltage shift, which is almost not dependent on the amplitude of the read voltages. </para>