A > 3 kV/2.94 m $\Omega\cdot$ cm2 and Low Leakage Current With Low Turn-On Voltage Lateral GaN Schottky Barrier Diode on Silicon Substrate With Anode Engineering Technique

Abstract

In this letter, we report on demonstrating high-performance lateral GaN Schottky barrier diode (SBD) on silicon substrate with low turn-on voltage ( $\text{V}_{\mathbf {on}}$ ), high breakdown voltage (BV) with low reverse leakage current ( $\text{I}_{\mathbf {R}}$ ), and high power figure of merit (P-FOM) through anode engineering technique. Lateral GaN SBD with anode-cathode distance ( $\text{L}_{\mathbf {AC}}$ ) of $25~\mu \text{m}$ demonstrates a $\text{V}_{\mathbf {on}} =0.38$ V, a BV of >3 kV at a $\text{I}_{\mathbf {R}}$ of $10\mu \text{A}$ /mm and differential specific ON-resistance ( $\text{R}_{\mathbf {on,sp}}$ ) of 2.94 $\text{m}\Omega ~\cdot $ cm2, yielding a high P-FOM of more than 3 GW/cm2. To the best of our knowledge, this P-FOM is the highest value among all the GaN SBDs on any substrates. Combining with 5 A forward current ( $\text{I}_{\mathbf {F}}$ ) and reverse BV >2 kV of a large periphery device with perimeter of 20 mm, GaN SBD with anode engineering technique shows its great promise for next generation power electronics.