Abstract
According to the dimer theory on semiconductor surface and chemical vapor deposition(CVD) growth characteristics of Si1−xGex, two mechanisms of rate decomposition and discrete flow density are proposed. Based on these two mechanisms, the Grove theory and Fick's first law, a CVD growth kinetics model of Si1−xGex alloy is established. In order to make the model more accurate, two growth control mechanisms of vapor transport and surface reaction are taken into account. The paper also considers the influence of the dimer structure on the growth rate. The results show that the model calculated value is consistent with the experimental values at different temperatures.
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