Abstract
In this study, we present a very quick full adder cell that has high energy efficiency based on carbon nano-tube transistor technology This project and other circuits in this study were in different voltages and frequencies with HSPICE software .The results of show that the speed and efficiency of this circuit is obviously better than other circuits like: CMOS and CNFET. Also, this full adder that we present, make great ability to on outlet and it works properly in low voltages.
Highlights
The difficulty of changing measure and physical limitation of silicon transistors, make designers to apply new Nano technology .one of the most hopeful and probable branches of Nano-technology is carbon nano-tube transistor . the usage of COMS transistors cause difficulties like high consumption of electrical current and increase of power consumption ; so, the carbon nano-tube transistors are going to be the alternative of silicon transistors
If you continue using CMOS technology in design of electronic integrated circuits, it causes dimension reduction of COMS transistor based on more law that resulting to improve speed cast and power consumption; but the min aturization of transistors is going to finish, because the circuits are so compressed that the chips will be so hot and the high heat lead to increase the power consumption and decrease of general operation .In recent years, designers have been trying to design circuits based on carbon Nano-Tube transistors (Deng, 2007; Raychowdhury and Roy, 2004)
We present a full adder cell based on carbon Nano-Tube transistors and we compare it with COMS and CNFET adder cell in different situations .Here, we explain about this adder briefly
Summary
The difficulty of changing measure and physical limitation of silicon transistors , make designers to apply new Nano technology .one of the most hopeful and probable branches of Nano-technology is carbon nano-tube transistor . the usage of COMS transistors cause difficulties like high consumption of electrical current and increase of power consumption ; so, the carbon nano-tube transistors are going to be the alternative of silicon transistors. Schottky barrier CNFET (SB-CNFET): IT works based on Schottky barrier In this kind of transistor the touch points of Drin and source joins directly to the channel of nano-tube. A carbon nano-tube transistor is similar to a consider the diameter of transferring gate of replacing. Nano-tube transistors, so large that the eve voltage of It means the basic operation of field effect nano-tube through fare is nearly zero and so, we don’t experience transistors is similar to current silicon transistors We consider a nano-tube as a channel in this circuit are in complete sway that this factor give and put an such channel should be controlled by a high assurance to the circuit and it cases reduction in gate electrode These transistors turn off/on by gate, leakage wasting power. We use from a newer design of XOR to perform type of carbon NLT here, in brief: this circuit and we use is instead of XOR in this circuit
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