Abstract
Current response of graded-gap AlxGa1ixAs X-ray detector is experimentally investigated. An increase in sensitivity of the detectors is achieved using a charge avalanche multiplication effect in a narrow region of a p-AlxGa1ixAs / n-GaAs heterojunction. The graded-gap AlxGa1ixAs X-ray detector with charge avalanche multiplication has been developed. The sensitivity of this new type detector at a bias voltage U = 1.5 V reaches 2.5 A=W. That is fty times higher in comparison with the sensitivity of the detector without charge multiplication (U = 0).
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