Abstract
A giant remanent polarization of BiFeO3 thin films is obtained by introducing Zn and Mn, and Bi(Fe0.93Mn0.05Zn0.02)O3 (BFMZO) thin films were prepared on SrRuO3-buffered silicon substrates by the radio-frequency sputtering. An (111) orientation is induced in such a film because of the introduction of an SrRuO3 buffer layer. An enhanced ferroelectric behavior of 2Pr ∼ 235 μC/cm2 and 2Ec ∼ 612 kV/cm is observed in BFMZO thin films, together with a fatigue-free behavior. As a result, the introduction of Zn and Mn is a good way to improve the electrical behavior of BiFeO3 thin films.
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