Abstract
Aluminum antimony (AlSb) is a promising photovoltaic material with a band gap of about 1.62 eV. However, AlSb is highly deliquescent and not stable, which has brought great difficulties to the applications. Based on the above situation, there are two purposes for preparing our Zn-doped AlSb (AlSb:Zn) thin films: One is to make P-type AlSb and the other is to find a way to suppress the deliquescence of AlSb. The AlSb:Zn thin films were prepared on glass substrates at different substrate temperatures by using the pulsed laser deposition (PLD) method. The structural, surface morphological, optical, and electrical properties of AlSb:Zn films were investigated. The crystallization of AlSb:Zn thin films was enhanced and the electrical resistivity decreased as the substrate temperature increased. The scanning electron microscopy (SEM) images indicated that the grain sizes became bigger as the substrate temperatures increased. The Raman vibration mode AlSb:Zn films were located at ~107 and ~142 cm−1 and the intensity of Raman peaks was stronger at higher substrate temperatures. In the experiment, a reduced band gap (1.4 eV) of the AlSb:Zn thin film was observed compared to the undoped AlSb films, which were more suitable for thin-film solar cells. Zn doping could reduce the deliquescent speed of AlSb thin films. The fabricated heterojunction device showed the good rectification behavior, which indicated the PN junction formation. The obvious photovoltaic effect has been observed in an FTO/ZnS/AlSb:Zn/Au device.
Highlights
Aluminum antimony (AlSb) is a binary compound semiconductor material with a theoretical indirect band gap of 1.62 eV that is very compatible with the solar spectrum [1]
AlSb:Zn thin films were successfully deposited on glass substrates by the pulsed laser deposition (PLD) method using a a single source of AlSb:Zn target
The crystallization of AlSb:Zn thin films was improved by increasing the substrate temperature
Summary
Aluminum antimony (AlSb) is a binary compound semiconductor material with a theoretical indirect band gap of 1.62 eV that is very compatible with the solar spectrum [1]. Theoretical calculations predict Zn doping can dramatically increase the chemical stability and reduce the band gap for AlSb predict. Doping can dramatically increase the chemical stability and reduce the band gap forisAlSb thin films. Experimental elementthe doping of AlSb while the thin AlSb film isthin formed stillthe in in itsfilms infancy. AlSb thin films by the one-step one-step facile PLD method. The optical and electrical properties of the films have been studied. AlSb-based photovoltaic device and was electrical fabricated,properties from which we films observed obvious photovoltaic effect. Photovoltaic device was fabricated, from which we observed an obvious photovoltaic effect
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