Abstract
We report a generic strategy for the preparation of Si-based nanodome (ND) arrays from SiH4 and GeH4 on an anodized aluminium template. TEM characterization revealed that the NDs were uniformly assembled as a hexagonal distribution of nanopores. The structures of the as-deposited and post-annealed samples were investigated by means of x-ray diffraction and Fourier transform infrared spectrometry. The Raman spectrum showed that the strains in the arrays were influenced by the Ge content. Also, the probable decomposition and deposition mechanism was discussed in view of two different deposition methods.
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