Abstract
A generalized theory for determining the field-enhanced thermal emission rates and carrier capture cross section of deep-level defects at very high field and for large trap density by the reverse pulsed deep-level transient spectroscopy technique has been developed in this paper. Using this new theory the field-enhanced emission rates for the DX center in a liquid-phase-epitaxial grown Sn-doped Al0.2Ga0.8As were determined for field strength up to 7×105 V/cm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
