A generalized model for tribovoltaic nanogenerator

Abstract

Converting mechanical energy into direct-current electric power based on the tribovoltaic effect is a typical characteristic of tribovoltaic nanogenerators (TVNGs). Although this newly discovered physics effect has been devoted to numerous research studies recently, a generalized theoretical model is still missing, thus unable to comprehensively elaborate the working principles of TVNG. Unlike previous qualitative explanations restricted to the conventional diffusion-drift theory, a new theoretical model is proposed according to classical semiconductor physics. Using the model, the governing equation of a TVNG is derived for the first time, which provides possibilities for revealing the variations of basic physical variables whether within the device or in an external circuit. The direct-current output is suggested to be the coupling of the tribovoltaic effect and contact electrification; in detail, it directly results from the movement and realignment of quasi-Fermi levels for excess carriers that are contiguous to the junction/contacting interface under non-equilibrium conditions. Moreover, an equivalent circuit model is established, equivalent to a constant current source parallel to a p–n junction diode according to the lumped parameter circuit theory. Notably, a new term, mechano-induced electric field EM, is defined and introduced to describe the impact of triboelectric charges at interfaces. Furthermore, using the COMSOL Multiphysics software, a dynamic simulation model for TVNGs is proposed, allowing the simulation and calculation of various TVNGs with different geometric constructions and charge distributions.