A GaN-on-Si quasi-vertical Schottky barrier diode with enhanced performance using fluorine ion-implanted field rings

Abstract

A GaN-on-Si quasi-vertical Schottky barrier diode (SBD) was fabricated with its performance enhanced using fluorine-implanted field rings and sidewall cathodes. F ions induced negative charges and the sidewall electrodes enhanced both the SBD’s breakdown and the on-resistance performance. A low specific on-resistance of 1.23 mΩ·cm2, a turn-on voltage of 0.54 V, a near unity ideality factor of 1.04, a high on/off ratio of >109, and a high breakdown voltage (BV) of 483 V are achieved with a GaN-on-Si quasi-vertical SBD with a 4.5 μm drift layer. The temperature dependency of the I–V characteristics proves the thermal stability of the proposed SBD.