A gallium oxide MESFET transistor with potential barrier layers for high-power and high-frequency applications

Abstract

Abstract In this article, a novel gallium oxide metal semiconductor field effect transistor (MESFET) is presented. This device is designed for high-power and high-frequency usage and features embedded potential barrier layers on each side of the gate metal within the channel. The gallium oxide semiconductor (Ga2O3) is highly valued in semiconductor technologies because of its large band gap (4.9–4.8 eV) and high breakdown field (6–8 MV cm−1). These properties make it suitable for high-power and high-frequency operations. We call the proposed structure; the potential barrier layers in Gallium Oxide MESFET (PBL-GO-MESFET). The key idea in the PBL-GO-MESFET transistor is embedding the PB layers to control the electric field distribution. Because of the PB layers, an increased breakdown voltage is observed in the PBL-GO-MESFET device, which is in contrast to conventional GO-MESFET (C-GO-MESFET) devices. The simulation findings indicate that the PBL-GO-MESFET transistor surpasses the C-GO-MESFET transistor in terms of breakdown voltage and radio frequency (RF) traits.