A gain boosting single stage cascode LNA for millimeter-wave applications

Abstract

This paper presents the design of 60 GHz low noise amplifier (LNA) aimed at realizing IEEE 802.11ad standard using 0.13-μm RF CMOS technology. Single stage cascode with source degeneration topology employing a gain boosting technique is adopted for better isolation and gain performance in millimeter-wave (mmW) frequency band. The simulation of the LNA yields the input reflection coefficient (S 11 ) of −20.75 dB, forward transmission gain (S 21 ) of 7.75 dB, and reverse isolation (£12) of 8.64 dB. The LNA design achieves a noise figure (NF) of 8.9 dB with minimum noise figure (NF min ) of 7.8 dB at 60 GHz. Thus, the design generates power dissipation of 15.17 mW for 1.2 V supply voltage.