Abstract
A GaAs monolithic microwave integrated circuit (MMIC) absorptive SPDT MESFET switch has been designed to operate from DC to 20 GHz. The circuit provides greater than 42-dB isolation and less than 3.3-dB insertion loss up to 20 GHz. The VSWR (voltage standing-wave ratio) of all ports is better than 2:1 over the entire frequency range. The circuit has performance close to PIN diode switches, but has several advantages such as operation to DC, fast switching speed, and low power needed to drive the MESFET switch. In addition to the absorptive switch, results on a variety of other designs are presented to demonstrate the versatility of MMIC MESFET switches. The ease of integration with other MMIC components is recognized as a valuable characteristic of MMIC MESFET switches. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
