Abstract
This letter presents a G-band balanced frequency doubler with high output power, realized using a 800 nm transferred-substrate InP-HBT process. The doubler delivers 5 dBm ±3 dBm in the range 140-220 GHz. The dc consumption is only 41 mW. To the knowledge of the authors, this is the highest output power for a wideband transistor based frequency doubler in the 140-220 GHz frequency range published so far. The results show the ability to implement a high output power G-band source in transferred-substrate InP HBT technology.
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