A 6–46 GHz, high output power distributed frequency doubler using stacked FETs in 0.25 μm GaAs pHEMT

Abstract

A 6–46 GHz balanced distributed doubler fabricated in a low-cost 0.25 μm GaAs pHEMT process is presented in this paper. For the first time, a distributed topology combining with a stacked-FET structure for a frequency doubler is used to realize a fully integrated wideband, high output power frequency doubler. The proposed frequency doubler achieves a measured gain of 8–14 dB, a maximum output power of 12–19 dBm and a typical fundamental suppression of 15 dBc from 6–46 GHz.