Abstract

Low-temperature electronics operating in below zero temperatures or even below the lower limit of the common −65 to 125 °C temperature range are essential in medical diagnostics, in space exploration and aviation, in processing and storage of food and mainly in scientific research, like superconducting materials engineering and their applications—superconducting magnets, superconducting energy storage, and magnetic levitation systems. Such electronic devices demand special approach to the materials used in passive elements and sensors. The main goal of this work was the implementation of a fully transparent, flexible cryogenic temperature sensor with graphene structures as sensing element. Electrodes were made of transparent ITO (Indium Tin Oxide) or ITO/Ag/ITO conductive layers by laser ablation and finally encapsulated in a polymer coating. A helium closed-cycle cryostat has been used in measurements of the electrical properties of these graphene-based temperature sensors under cryogenic conditions. The sensors were repeatedly cooled from room temperature to cryogenic temperature. Graphene structures were characterized using Raman spectroscopy. The observation of the resistance changes as a function of temperature indicates the potential use of graphene layers in the construction of temperature sensors. The temperature characteristics of the analyzed graphene sensors exhibit no clear anomalies or strong non-linearity in the entire studied temperature range (as compared to the typical carbon sensor).

Highlights

  • The application of transparent conductive films and multilayer films for resistance temperature detectors in cryogenic systems was discussed for the first time in [1]

  • We propose for the first time a sensor with a graphene layer as sensitive element designed for cryogenic temperature measurement

  • Laser direct writing was applied to electrode patterning for flat panel displays [61], fabricating a miniature transparent gas flow meter [62], electrode isolation in indium tin oxide (ITO) layer on substrates used in the mobile phones [63], a pentacene thin film transistor (TFT) with source and drain electrodes patterned in ITO [64], and producing matrix array of OLEDs [65]

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Summary

Introduction

The application of transparent conductive films and multilayer films for resistance temperature detectors in cryogenic systems was discussed for the first time in [1]. Graphene is one of the most promising materials for a diversity of modern technological applications due to its excellent electrical, optical, thermal, mechanical, electrochemical and structural characteristics [2,3,4]. The exceptionally high electrical conductivity of graphene combined with its transparency, flexibility and mechanical strength, make it suitable for microelectronic devices (Field Effect Transistors—FETs), photonics and optoelectronic systems, passive electronic elements and for sensing applications [3,5,6,7]. We propose for the first time a sensor with a graphene layer as sensitive element designed for cryogenic temperature measurement.

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