Abstract
The integration of a full 1D numerical model for a power diode, into a commercial circuit simulator (Saber) is demonstrated for the first time. The model is based upon the solution of the full set of device equations making very few simplifications, thus retaining all the key elements of the physical operation of the device, and as such is therefore valid under all operating conditions. The model is verified against experimental measurements and full 2D numerical simulations of the device. The method used here can also be applied to model other power devices, which exhibit charge storage effects such as thyristors and IGBTs.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
