Abstract
A fully integrated linear power amplifier (PA) for 5GHz WLAN application has been realized in the OMMIC 0.2μm AlGaAs/InGaAs/GaAs PHEMT process. The single-ended two-stage power amplifier uses on-chip inductors and capacitors for input, interstage and output matching. Under a single supply voltage of +3.5V, this power amplifier exhibits linear output power of 26.9dBm (P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</inf> ), small signal gain of 28.6dB and the power added efficiency (PAE) of 36.1% at P <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1dB</inf> . The die size is only 1.5mm×1.0mm.
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