Abstract
AbstractA fully integrated gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) power amplifier (PA) for wireless local area network 802.11ax applications is presented in this paper. The structure consists of two‐stage power cells. To satisfy the high linearity requirements of IEEE 802.11ax, we analyzed the distortion of amplitude‐to‐amplitude and amplitude‐to‐phase. Due to the thermal and voltage sensitivity of GaAs HBT, an adaptive bias circuit is designed to ensure linearity. Moreover, an efficient passive output matching network is designed by analyzing the efficiency of the passive network. The design electromagnetic structure is fabricated in a 2‐μm GaAs HBT process. Under continuous wave testing, the output power reaches 27.2 dBm and the maximum efficiency of 28% at 2.4 GHz. Under the excitation of a 40 MHz 1024‐quadratic amplitude modulation signal, the output power meeting error vector magnitude of −35 dB reaches 16.8–17.2 dBm from 2.4 to 2.5 GHz.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
