A fully integrable insulated gate bipolar transistor with a trench gate structure

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A novel, fully integrable insulated gate bipolar transistor (IGBT) with a trench gate structure, called the 3D IGBT, is described. The 3D IGBT uses selective epitaxial silicon to form a top-contacted anode and still retain the cellular structure of vertically oriented devices. It is fabricated using a self-aligned process that permits an increase in channel density by reducing the trench width. Two-dimensional computer simulations of 3D IGBTs with a unit cell width of 15 mu m have been performed and show an increase in channel density by a factor of more than eight over the lateral IGBT. >