Abstract
ABSTRACTA full X‐band push‐pull power amplifier (PA) with predistortion linearizer is developed in tsmcTM 0.18‐µm CMOS technology. The broadband performance is achieved by using transformers including a differential Guanella‐type transmission line transformer and two magnetically coupled transformers. The linearity of PA is enhanced by feedback topology and the use of predistortion linearizer. Over full X‐band from 8 to 12 GHz, the saturated power and maximum power‐added efficiency are higher than 21.3 dBm and 16.19%, respectively. The performances of output power at 1‐dB compression point and power‐added efficiency (PAE) at P1dB are significantly improved by an output power of 2.2 dBm and a PAE of 12.1%, which contributes to power back‐off operation for the application of linear modulation. The chip area, including pads, is 1.05 mm2. © 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:2229–2232, 2013
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