Abstract
Design and modeling of geometric diodes can be really challenging as it requires a rigorous quantum analysis at the nanoscale, accurate enough to capture the asymmetric behavior of charge transport. In this paper, we present a full-wave Time-Dependent Schrödinger Equation (TDSE) approach to model coherent transport in a two-dimensional geometric diode defined by an asymmetric taper of the domain where the charges are confined. The proposed solution clearly shows asymmetric transport, and provides a description of the rectification behavior in response to a parametric change. In general, the above model can account for even more complex geometries in order to optimize diodes performance.
Published Version
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