Abstract
In this brief, based on the Gaussian quadrature method, we develop an analytical drain current model for the dual-material-gate heterojunction tunnel field-effect transistor (DMG-H-TFET) due to its advantages over the H-TFET and DMG-TFET. This model accounts for the effects of source depletion, drain depletion, ambipolar behavior, and mobile charge both in inversion and accumulation states. The accuracy of the model is validated against TCAD simulation and published data. The dependences of the surface potential, electric field, and drain current on biases and drain doping concentrations are well predicted. Besides, in comparison with the conventional H-TFET, the improvement in drain current and the alleviation of delayed saturation in DMG-H-TFET can also be observed through the proposed model.
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