Abstract
A frequency-tunable cloak with semiconducting constituents has been proposed by modifying the dielectric constant by externally controlling the free-carrier density. We have theoretically studied that the cloaking frequency of a single-layer shell consisting of intrinsic InSb can be tuned by varying the temperature based on the Mie scattering theory. The calculated results show that this tunable cloak has a large bandwidth of over 0.3 THz, a tunability of cloaking frequency of 17 GHz K−1 with temperature and a dramatic reduction in the total scattering cross section of 90% at cloaking frequencies. It is also possible to realize a tunable cloak of extrinsic semiconductor Ge by changing the impurity density with current injection.
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