Abstract
In this paper a framework for automatic generation of neural network modelsfor the dual-gate MESFET is presented. Values of the large-signal model areextracted from S-parameter measurements at many DC-bias points. The automaticmodel generation is accomplished by integrating multiple software tools, includingone developed by the author, in a homegrown integration environment. Thetechnique is used to model a 6-gate 1x100 μm dual-gate MESFET manufacturedby Nortel Networks, Ottawa, Canada. The large-signal model is then verifiedthrough a variable gain large-signal amplifier application based on the dual-gateMESFET. Measurements and harmonic balance simulations of the verificationcircuit showed very good agreement of the first harmonic. For the second and thirdharmonic, some discrepancies between the measurements and the model areobserved. This is mainly due to some model simplifications and second ordereffect.
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