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https://doi.org/10.1109/4.711347
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Cite Journal: IEEE Journal of Solid-State Circuits |  Publication Date: Jan 1, 1998 |
 Citations: 12 |
Affiliation: Motorola (United States)
This paper presents a four-terminal, physically based, high-voltage diffused resistor model. The model accounts for depletion, inversion, and accumulation at the surface due to the MOS effect of metal field plates, as well as the depletion pinching effect at the sides and bottom of the diffused resistor.
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