A four-interleaving HBD SRAM cell based on dual DICE for multiple node collection mitigation

Abstract

A 4-interleaving cell of 2-dual interlocked cells (DICE) is proposed, which reduces single event induced multiple node collection between the sensitive nodes of sensitive pairs in a DICE storage cell in 65 nm technology. The technique involves the 4-interleaving of dual DICE cells at a layout level to meet the required spacing between sensitive nodes in an area-efficient manner. Radiation experiments using a 65 nm CMOS test chip demonstrate that the LETth of our 4-interleaving cell of dual DICE encounters are almost 4× larger and the SEU cross section per bit for our proposed dual DICE design is almost two orders of magnitude less compared to the reference traditional DICE cell.