Abstract
A flux method for the analysis of the excess carrier transport in multiple layer solar cells is described. This method avoids the assumptions of the usual macroscopic device theory that the physical dimension of the system should be large compared with the mean free path of the excess carrier. In this analysis the macroscopic current is described in terms of the microscopic parameters of the excess carrier like mean free path, mean life time, and mean thermal velocity. The general formalism, presented here, can be applied to almost any type of solar cell structure. In the appropriate limits, the results of this formalism are shown to reduce to those obtained by earlier restricted analysis.
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