Abstract
This paper presents a very ∞exible and generic design of a diode-based RF predistortion linearizer that can correct for the dual- in∞ection point type compression characteristics found in the gain proflle of metal semiconductor fleld efiect transistor (MESFET) based and Doherty power ampliflers. It consists of a circuit conflguration that has the head-tail conflguration of Schottky diodes, complemented with a p-intrinsic-n (PIN) diode in parallel, at two ports of a 90 - hybrid coupler for improving the performance of the linearizer. The use of a PIN diode in the linearizer provides it with an extra level of freedom in achieving the desired characteristic. Overall, the linearizer is equipped with three degrees of freedom and hence possesses the capability to achieve output characteristics that can be employed in linearizing various types of power ampliflers. The proposed linearizer has been shown to simultaneously improve the third- and flfth- order intermodulation distortions of a commercial ZHL-4240 gallium arsenide fleld efiect transistor (GaAs FET) based power amplifler over a 10dB power range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
