Abstract
This paper presents a ∞exible and generic broadband RF predistortion linearizer designed using backward re∞ection topology that can correct for the dual-in∞ection point type compression characteristics usually encountered in the gain proflle of metal semiconductor fleld efiect transistor (MESFET) based power ampliflers. It employs circuit conflguration of two parallel Schottky diodes with one p-intrinsic-n (PIN) diode in parallel, connected at two ports of a 90 - hybrid coupler. The Schottky diodes are coupled via a quarter wave transmission line segment which generates dual in∞ection points in the gain characteristics of the linearizer. The incorporation of a PIN diode helps in improving the achievable range in the gain and phase characteristics of the linearizer. Overall, the linearizer is capable of linearizing various types of power ampliflers owing to the ∞exible control on the linearizer's parameters and eventually the gain and phase characteristics of the linearizer. The proposed linearizer can be employed in the frequency range of 1.4{2.8GHz and can simultaneously improve the third- and flfth-order intermodulation distortions. The measurements carried out on a commercial ZHL-4240 gallium arsenide fleld efiect transistor (GaAs FET) based power amplifler demonstrates the broadband functionality of the proposed linearizer.
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