A first principles investigation of ternary and quaternary II–VI zincblende semiconductor alloys

Abstract

One of the most common ways of tuning the stability, electronic structure, and optical behavior of semiconductors is via composition engineering. By mixing multiple isovalent elements at any cation or anion site, new compositions may be generated with markedly different properties than end-point compositions, and not always lying within a predictable trend. In this work, we explore the trends in lattice constant, electronic band gap, formation and mixing energy, and optical absorption behavior in a series of II–VI zincblende semiconductors with Cd/Zn at the cation site and S/Se/Te at the anion site, using multiple levels of density functional theory approximations. We find that while the GGA-PBE functional reproduces all trends correctly, full geometry optimization with the HSE06 functional predicts band gaps with much higher experimental accuracy. We find that all mixed S–Se and mixed Cd–Zn compounds show linear trends in band gap, rising from Se to S and Cd to Zn, respectively, whereas all Se–Te mixed compounds exhibit band gap bowing. All mixing energy curves, calculated based on decomposition to end point compositions, show inverted bowing behavior but with small positive mixing energy values <50 meV per formula unit, indicating robust stability of all solid solutions. Formation energies, calculated based on decomposition to elemental species, always show linear trends and remain sufficiently negative for all binaries, ternaries and quaternaries, whereas lattice constants show expected linear trends. We further report trends in optical absorption spectra and relationships between PBE and HSE computed properties, which reveal equations that can be used to accurately predict higher fidelity data. This work lays out systematic trends in the stability and optoelectronic characteristics of Cd–Zn–S–Se–Te alloys and enables the selection of optimal compositions for desired applications.