Abstract
We successfully combined electrothermal and phase-field models in a finite element framework to establish a device model for set operation in phase-change memory. The electrothermal model calculates current density, Joule heating and heat transfer, and the resulting temperature profile from bias conditions while the phase-field model calculates thermal history dependent phase-change such as melt-quench and stochastic nucleation followed by growth. In this work, we will discuss capabilities of our model and its applications to set pulse design and intrinsic variability analysis.
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