Abstract
M-DNA can be considered as a linear array of metal ions separated by about 4 Å. Theincreased conductivity of M-DNA is attributed to the similar site energies for all base pairsallowing fast electron hopping. The gate voltage effect on the conductivity ofM-DNA is considered theoretically, and we demonstrate that M-DNA can be usedas an active element of a field-effect transistor. We propose that a gate voltageapplied perpendicular to the helix axis will cause displacement of the metal ions(an ionic Stark effect) and induce differences in the site energies. As a resultof induced differences in the site energies the hopping rate can be significantlymodulated by the transverse electric field. The metal ion energy states are calculatedusing the point-ion crystal field theory. We find that a gate voltage of 1 V at adistance of 5 nm is sufficient to decrease the conductivity of M-DNA by at least10-fold.
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