A field-effect transistor-based room-temperature quantum current source

Abstract

This work provides a proof-of-concept demonstration of the room-temperature quantum current source based on a nanoscale metal-oxide-semiconductor-field-effect-transistor (MOSFET). Using a low leakage MOSFET design, the current source achieved 1.000 11 ± 0.000 22 charges per cycle without any leakage correction scheme. The achieved accuracy is limited by noise in the very low level of measured current and by calibration uncertainty.