Abstract
Abstract The object of this work is the development of a semiconductor sandwich neutron spectrometer composed of a 6 LiF converter placed between two 4H–SiC Schottky diodes. In particular, the diodes construction, alpha detection characterization and preliminary neutron radiation damage tests are described, in order to evaluate the capability of the detector to work in harsh environments characterized by high neutron fluence rate. A theoretical determination of the optimal converter thickness and an analysis of the detection efficiency of the spectrometer at different neutron energies are performed with Monte Carlo simulations.
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